semiconductor group 1 npn silicon af transistors bc 635 bc 639 5.91 type ordering code marking package 1) pin configuration bc 635 bc 637 bc 639 Q68000-a3360 Q68000-a2285 Q68000-a3361 C to-92 e c b 1 2 3 if desired, selected transistors, type bc 63 h C10 ( h fe = 63 160), or bc 63 h C16 ( h fe = 100 250) are available. ordering codes upon request. 1) for detailed information see chapter package outlines. l high current gain l high collector current l low collector-emitter saturation voltage l complementary types: bc 636, bc 638, bc 640 (pnp) 1 2 3
semiconductor group 2 bc 635 bc 639 maximum ratings parameter values unit collector-emitter voltage v peak collector current collector current a junction temperature ?c total power dissipation, t c = 90 ?c 1) w storage temperature range collector-base voltage thermal resistance junction - ambient 1) 156 k/w 60 1 1.5 0.8 (1) 150 C 65 + 150 emitter-base voltage base current ma 100 junction - case 2) 75 45 80 60 45 100 bc 637 bc 635 bc 639 5 peak base current 200 symbol v ce0 i cm i c t j p tot t stg v cb0 r th ja v eb0 i b r th jc i bm 1) if the transistors with max. 4 mm lead length are fixed on pcbs with a min. 10 mm 10 mm large copper area for the collector terminal, r th ja = 125 k/w and thus p tot max = 1 w at t a = 25 ?c. 2) mounted on al heat sink 15 mm 25 mm 0.5 mm.
semiconductor group 3 bc 635 bc 639 electrical characteristics at t a = 25 ?c, unless otherwise specified. dc current gain i c = 5 ma; v ce = 2 v i c = 150 ma; v ce = 2 v 1) i c = 500 ma; v ce = 2 v 1) v collector-emitter breakdown voltage i c = 10 ma bc 635 bc 637 bc 639 v (br)ce0 45 60 80 C C C C C C na m a collector cutoff current v cb = 30 v v cb = 30 v, t a = 150 ?c i cb0 C C C C 100 20 unit values parameter symbol min. typ. max. dc characteristics collector-base breakdown voltage i c = 100 m a bc 635 bc 637 bc 639 v (br)cb0 45 60 100 C C C C C C emitter-base breakdown voltage i e = 10 m a v (br)eb0 5CC mv collector-emitter saturation voltage 1) i c = 500 ma; i b = 50 ma v cesat C C 500 C h fe 25 40 25 C C C C 250 C v base-emitter voltage 1) i c = 500 ma; v ce = 2 v v be) CC1 na emitter cutoff current v eb = 4 v i eb0 C C 100 ac characteristics mhz transition frequency i c = 50 ma, v ce = 10 v, f = 20 mhz f t C 100 C 1) pulse test: t 300 m s, d 2%.
semiconductor group 4 bc 635 bc 639 total power dissipation p tot = f ( t a ; t c ) permissible pulse load r thja = f ( t p ) v ce = 2 v collector cutoff current i cb0 = f ( t a ) v cb = 30 v collector current i c = f ( v be )
semiconductor group 5 bc 635 bc 639 dc current gain h fe = f ( i c ) v ce = 2 v transition frequency f t = f ( i c ) v ce = 10 v, f = 20 mhz collector-emitter saturation voltage v cesat = f ( i c ) h fe = 10
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